US8586151: Process for the preparation of photoluminescent nanostructured silicon thin films using radio frequency plasma discharge

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A process for the preparation of nano structured silicon thin film using Radio Frequency (RF) plasma discharge useful for light emitting devices such as light emitting diode, laser etc., which allows precise control of the nanocrystal size of silicon and its uniform distribution without doping using a plasma processing for obtaining efficient photoluminescence at room temperature.

Patent No:: US8586151
Application No:: 12/810920
Filing Date:: 28-06-2010
Issue Date:: 19-11-2013
Applicant:: CSIR-National Physical Laboratory (CSIR-NPL), New Delhi
Inventor(s):: Kumar, Sushil (New Delhi, In); Dixit, Prakash Narain (New Delhi, In); Rauthan, Chandra Mohan Singh (New Delhi, In)
IPC Classification:: C23C16/24
Country:: United States of America

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