Computational study of the role of elastic anisotropy surface stress and Compositional seggregation in Ge-Si coherent heteroepitaxial growth

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Department of Chemistry, Indian Instiute of Technology (IIT), Kanpur, Uttar Pradesh, 208016

Principal Investigator

Dr. Madhav Ranganathan

Associate Professor, Department of Chemistry, Indian Instiute of Technology (IIT), Kanpur, Uttar Pradesh, 208016

Area of Research

Physical Sciences

Focus Area

Ge-Si Coherent heteroepitaxial growth

Start Date

2016

Status

Completed

Contact

madhavr@iitk.ac.in

No. of Research Paper

Technologies (If Any)

No. of PhD Produced

Publications

No. of Patents

Filed : 00

Grant : 00

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