Research Projects

The proposal provides an overview of the potential applications of photodetectors functioning in the Ultra-Violet (UV) area and the challenges associated with their development. It highlights the limitations of using photoconductive gain in photodetectors, including longer reaction times, and suggests the use of semiconductor-based avalanche photodetectors and wide band gap semiconductors as alternatives. However, these options have their own drawbacks, such as poor conductivity and high dislocation density. To address these issues, we propose the use of high-quality bilayer large band gap metal oxides. The proposal also discusses the advantages of using nanofabrication technologies and heterojunction/heterostructure coupling of semiconductors to improve the performance of UV photodetectors. Specifically, the report proposes the synthesis of β-Ga2O3/SnO2 nanowire heterostructure as an effective UV photodetector for the first time. The proposal suggests that the coupling of metal oxide semiconductors may be an effective way to achieve high-performance UV photodetectors. Overall, the proposal highlights the challenges of developing SB photodetectors and proposes new approaches to improve their performance, making it a valuable contribution to the field of photodetector research.