Understanding the interplay between charge transfer energy, charge disproportionation, strain and spin ordering in transition metal oxides thin films
Implementing Organization
UGC-DAEConsortium For Scientific Research, Madhya Pradesh
Principal Investigator
Dr. Ram Janay Choudhary
UGC-DAEConsortium For Scientific Research, Madhya Pradesh
CO-Principal Investigator
Dr. Rajamani Raghunathan
UGC-DAEConsortium For Scientific Research, Madhya Pradesh-452001
Project Overview
Transition metal oxides (TMOs) are characterized by their unique electronic and magnetic properties due to the competing forces of transition metal (TM)-3d electrons. These properties are influenced by the electron-electron Coulombic interaction and TM 3d-O 2p hybridization, which facilitate the delocalization of electrons. TMOs can be classified as Mott-Hubbard insulators or charge transfer insulators based on their charge transfer energy (Δ). However, TMOs with high covalent strength contribute to the ground state, revealing charge fluctuations and potentially causing charge disproportionation (CD) in the system. TMOs with negative charge transfer energy values exhibit various physical properties, such as superconductivity, diamagnetism, and ferromagnetism. The charge transfer energy Δ depends on the TM 3d-O 2p hybridization and decreases with increased hybridization. To adapt to a negative Δ value with a 3dn+1L ground state, TMOs can be tuned via strain in the system. Cobaltate perovskites are relevant materials due to their higher covalent character and low Δ values. This project aims to experimentally examine the electronic structure manifestations of negative charge transfer energy in cobaltates using combined resonant photoemission spectroscopy and X-ray absorption near edge spectra, along with microscopic insights from first-principles calculations. The study aims to probe the interplay between charge transfer energy, charge disproportionation, strain, and spin in transition metal oxide thin films, as tuning Δ is crucial for potential applications where mobile/localized O-2p holes are used instead of strongly localized TM-3d electrons to improve functionalities.
Source
Source
Science and Engineering Research Board (SERB), DST 2022-23
Science and Engineering Research Board (SERB), New Delhi
Quick Information
Area of Research
Physical Sciences
Start Date
2022
End Date
2025
Status
Completed
Contact
ram@csr.res.in
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
00
Publications
00
No. of Patents
Filed :00
Grant :00
Disclaimer:
Information available on this portal is sourced from various organizations and is provided for informational purposes only. Users are advised to verify details from the respective official sources.
Please enter your details
Please provide your name and email to continue. Your details are saved in this browser for future use.
Latest Updates
Loading…
⚠️
You are leaving this website
You are about to be redirected to an external website that is not operated by
India Science, Technology & Innovation (ISTI) Portal.