Research Projects

The purpose of this work to enhance the efficiency of the CsSnGeI3 solar cell as well as to reduce the absorber layer production cost. But the efficiency of the CsSnGeI3 cell is hindered due to back surface recombination and barrier height at the metal/semiconductor contact. An additional layer called BSF layer with graded band gap can eliminate the drawback of the CsSnGeI3 solar cell. At present a very few experimental work has been done on CsSnGeI3 solar cell with additional BSF layer. Therefore further works for developing a new design of CsSnGeI3 solar cells using BSF layer are desirable to enhance its performance. In this projects theoretical studies will be done using SCAPS-1D software prior to the experimental works to optimize layers parameter i.e band gap, thickness etc of the proposed CsSnGeI3 solar cell. We have already shown a enhancement of efficiency upto 24.22% using PbS as BSF layer in this direction. The nanostructures layers for the proposed solar cell will be synthesised through chemical route. Band gap and thickness of the proposed solar cell’s layers will be controlled with the growth parameters. Before fabrication of photovoltaic device the growth condition will be optimized to realize good quality CsSnGeI3 and other nanostructures. A systematic doping profile of Indium and Gallium into CuSe will be carried out to synthesis the desired CsSnGeI3 layer. We will prefer CdS, CdSe, ZnSe as prime buffer layers and ZnS, ZnO etc as window layers to fabricate the proposed CsSnGeI3 solar cell. Earlier the synthesized nanostructures will be characterized by standard techniques viz: XRD, SEM, HRTEM, and UV-VIS absorption, PL, IR and TGA. The conduction mechanism will be observed by studying the I-V characteristics in dark and under white and monochromatic lights as well as their temperature. The recombination kinetics and charge separation dynamics will be studied from photoconductivity measurements on CsSnGeI3 layer. A variety of photovoltaic device using different buffer and window layer will be designed and fabricated. CsSnGeI3 will be the main absorber layer which will be sandwiched with other layers. Potential BSF layer such as PbS, SnS, MoSe2 will be employed in fabrication of device. Layer thickness will be controlled through spin coater. ITO will be the bottom electrode whereas Al will be used as top electrode. The Solar cell characteristics will be determined using Solar Stimulator. The prime parameters such as open circuit voltage, short circuit current density, fill factor and efficiency will be estimated from the observation. The characteristics parameters and efficiency of each of the cell will be compared with and without BSF layer. The role of different layers thickness as well as their band gaps will be co-related with the photovoltaic characteristics.