Research Projects

The development of electronic devices, such as televisions, smart phones, laptops and computers have been preceded by the advancement of display technologies, such as active-matrix liquid-crystal display (AMLCD) and organic light emitting diodes (AMOLEDs). Particularly, AMOLEDs provide fast motion-picture response time, vivid colour, high contrast, and super-slim light-weight nature. Scaling down of pixel unit is highly essential for high-resolution display systems which can achieved by high mobility thin-film transistors (TFTs). Currently, low temperature polycrystalline silicon (LTPS) TFTs have been used as backplane of AMLCD and AMOLED displays. However, LTPS TFTs suffer from major drawbacks such as non-uniformity, stability issues under bias conditions and high manufacturing cost. To address these issues, we have proposed a novel amorphous oxide semiconductor (AOS) active channel layer TFT, which would have high uniformity, low process temperature, low leakage current, high mobility (100 cm2/V.s) and industry scalable. The proposed device fabrication will be achieved by sputtering and photo-lithography techniques. The proposed novel AOSs TFTcould be used as an efficient alternative to the existing a-Si, LTPS and a-IGZO TFTs in flat panel displays.