Development of wide-bandgap semiconductors based highly efficient power electronics systems for Electric Vehicle
Implementing Organization
Csir-Central Electronics Engineering Research Institute(Csir-Ceeri), Pilani
Principal Investigator
Dr. Nidhi Chaturvedi
Csir-Central Electronics Engineering Research Institute(Csir-Ceeri), Pilani
nidhichatur@gmail.com
CO-Principal Investigator
Dr. Moumita Das
Indian Institute Of Technology Mandi, Parashar Road, Tehsil Sadar, Near Kataula, Kamand,Himachal Pradesh,Mandi-175005
CO-Principal Investigator
Dr. Sarthak Nag
Indian Institute Of Technology Mandi,Parashar Road, Tehsil Sadar, Near Kataula, Kamand,Himachal Pradesh,Mandi-175005
CO-Principal Investigator
Dr. Sumitra Singh
Csir-Central Electronics Engineering Research Institute(Csir-Ceeri), Pilani,Pilani,Rajasthan,Jhunjhunu-333031
CO-Principal Investigator
Dr. Dipankar Saha
Indian Institute Of Technology Bombay,Iit Po Powai,Maharashtra,Mumbai-400076
CO-Principal Investigator
Dr. Satish Shamsundar Belkhode
Indian Institute Of Techno
Project Overview
In the context of the rapidly expanding distributed power generation and load demands, the need for highly efficient and reliable power converters and inverters has become paramount. High-voltage inverters and DC-DC converters play a crucial role in the EV systems, serving as the key interface between different voltage levels. Indigenous development of these systems is very crucial for making our country self-reliant. The problems affecting the performance of system adversely need to be addressed such as the inherent risks associated with high voltage operation, such as potential arcing and insulation failures. This necessitate a comprehensive safety control framework to ensure reliable and safe operation. Another major hurdle faced by these systems is the significant amount of volumetric heat generated during operation, which, if unmanaged, compromises component performance, longevity, and safety. Wideband gap materials GaN & SiC based devices are capable to deliver high efficiency, high power and high frequency outputs at lightweight compact size due to the material properties as well as the device structures. While some of these devices are commercially available, many of the technologies are still being developed, and under the pure research mode. It is indispensable to develop these technologies indigenously through this work, along with the power-electronic systems for EVs where these modules will be deployed. The development of these technologies for EV-specific requirements will allow for maximizing the benefits of these devices, which are hitherto unavailable now. The proposed mission is on the technology vertical of power electronics, machines and drives. The key components and systems of the EV such as converters, inverters and onboard chargers will be indigenously developed based upon the wide band gap devices. An integrated safety control framework will be developed for high-voltage DC-DC converters, leveraging advanced monitoring techniques, predictive maintenance strategies, and compliance with industry standards. This proposal also seeks to establish a new benchmark for EV thermal management, and will contribute towards the development of efficient and safer EVs, thus setting the base for the sustainable adoption of electric mobility. The mission is divided into 4 work packages with many sub work packages. The wideband gap semiconductors devices will be indigenously developed. The EV components will be developed using commercially available semiconductor devices at first. Later on, these will be replaced by the indigenously developed wideband gap based semiconductor devices.
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