Research Projects

Ferroelectric materials, characterized by switchable spontaneous electric polarization, have become essential in various technological applications such as sensors, actuators, and non-volatile memory devices. Two-dimensional (2D) ferroelectrics, distinguished by their ultrathin nature and exceptional electronic and polarization properties, have recently attracted considerable research attention due to their potential integration with conventional semiconductor technologies and prospects for miniaturization. Among these 2D ferroelectrics, sliding ferroelectricity (SFE)—originating from lateral relative displacement of atomic layers in van der Waals (vdW) materials—has emerged as an exciting and novel phenomenon. The discovery of SFE in simple bilayer structures, including hexagonal boron nitride (h-BN) and transition-metal dichalcogenides (TMDCs), highlights the potential for developing polarization-switchable devices. This proposal first aims to develop a symmetry-based theoretical framework that can predict the polarity of bilayer stackings based solely on the symmetry and lattice of a monolayer—without requiring any DFT or other computationally expensive methods. Based on this framework, we will build an open-source software tool that takes a monolayer structure as input and systematically identifies polar and non-polar bilayer stacking configurations. Subsequently, we will extend the investigation to complex hetero-bilayer and multilayered vdW structures through ab initio Density Functional Theory (DFT) calculations, enabling a deeper understanding of the structural and electronic conditions that give rise to sliding ferroelectricity. Furthermore, we propose to explore sliding-induced multiferroicity, an emerging phenomenon where interlayer motion simultaneously modulates both ferroelectric and magnetic orders. By revealing the underlying mechanisms of such coupled behaviors, this research aims to advance both fundamental insights and application-oriented strategies for developing next-generation nanoelectronic, spintronic, and memory devices.