Research Projects

At present, lead is a major issue for perovskite based photodetectors for the sustainable development for society. Therefore, lead based perovskite is a current major issue for fast response photodetector applications for sustainable development. In this context, lead-free perovskite (CsSnI3) can be a good candidate for an appealing absorber layer material for perovskite photodetectors. Further, the electron transport layer (ETL) and hole transport layer (HTL) play a major role as a carrier transport layer in this context nanowires (NWs) have a major advantage over the bulk layer. Nanowires have major advantage due to high surface-to-volume ratio which can enhance light absorption capability (increase total internal reflection). Therefore, in this project, we have selected inorganic wide bandgap materials of ZnO (3.37 eV) and NiO (3.62 eV) for ETL and HTL layer as a carrier transporters due non-toxicity, high transparency, can make nanowire easily, flexibility and large excitonic binding energy (60 meV). In this work, n-ZnO/CsSnI3/p-NiO heterostructure (HS) nanowire (NW) was grown by GLAD technique will be fabricated inside a sputtering chamber for ETL and HTL layer and CsSnI3 will be fabricated by spin coating technique. The proposed technique can give highly aligned heterogeneous nanostructures with controlled dimensions and uniformity. Photodetectors will be fabricated by evaporating metal contacts and various performance analyses will be carried out. Although, some groups have reported β-Ga2O3 NW/CH3NH3PbI3/NiO NW HS [1], but such system promises to deliver a lead based photodetector, therefore we have to eliminate lead and enhance results. Also, Muchahary et al. [2] have reported ITO/TiO2/n-CsSnI3/p-CsSnI3/NiO/Au heterojunction for solar cell application. Moreover, photodetectors fabricated with the ITO/n-ZnO/CsSnI3/p-NiO/Ag HS NW can be provide much better responsivity, detectivity and achieve ultrafast response. Therefore, the project also focuses on the controlled growth of ETL and HTL layers of NW using GLAD integrated sputtering technique and study in detail the effect of metal contact on the enhanced performance of photodetectors.