Development of High-Performance Perovskite-Based Thin Film Memory Devices and High-Efficiency Solar Cells for Next-Generation Electronic and Energy Applications
Implementing Organization
Indian Institute Of Technology Roorkee
Principal Investigator
Mr. Utkarsh Pandey
Indian Institute Of Technology Roorkee
utkarshpandey.rs.mst19@itbhu.ac.in
Project Overview
This research proposes the development of advanced perovskite-based memory devices, including memory transistors and memristors, along with high-performance perovskite solar cells. The focus will be on synthesizing stable, defect-tolerant perovskite thin films and fabricating metal/perovskite/metal structures to investigate resistive switching behavior. Memory transistors will be optimized for non-volatile operation with fast switching speed, multi-level storage, low operating voltage, high on/off ratio, and excellent retention and endurance.
The project will also explore switching mechanisms, ion migration, defect dynamics, and the role of interface engineering in improving device stability. Charge transport and modulation in memory transistors will be a key aspect for flexible and portable applications.
In parallel, perovskite solar cells will be fabricated using cost-effective, scalable methods, focusing on materials with high stability, strong light absorption, and achieving high open-circuit voltage (Voc) and short-circuit current density (Jsc). This integrated study aims to advance next-generation memory and photovoltaic technologies.