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Development of Quantum Tunneling Driven Temperature Independent Photodetector.

Implementing Organization

Principal Investigator
Dr. Shailendra Kumar Saxena
Srm Institute Of Science And Technology
shailens@srmist.edu.in

Project Overview

This project aims to leverage molecular electronics (ME) to develop robust, temperature-independent, wavelength selective and ultrasensitive tunnel photodetectors (PDs), addressing the limitations of conventional semiconductor devices in space and defence applications. By utilizing molecular junctions (MJs) with distinct HOMO-LUMO characteristics, the device harnesses quantum tunneling for efficient, temperature independent charge transport. The robust molecular junction-based tunnel photodiode (MJPDs) will be fabricated by designing the bottom electrodes using photolithography, grafting organic molecules through electrochemical methods followed by top electrode deposition. The molecular layers will be characterized by atomic force microscopy (AFM) and in-situ spectroscopy techniques. The MJPDs will be rigorously tested to evaluate its temperature dependence and responsivity. Key performance metrics, such as current density, activation energies, and robustness under varying conditions will be assessed to make it for real world application. The proposed research has the potential to push molecular electronics from lab-scale experiments to practical real-world applications, offering novel solutions for temperature-independent and ultrafast devices. This advancement paves the way for the development of next-generation photodetectors, enhancing reliability and performance, particularly in harsh environments encountered in space and defence technology.
Funding Organization
Quick Information
Area of Research
Engineering Sciences
Focus Area
Electronics Engineering
Start Date
09 Jun 2025
End Date
08 Jun 2028
Status
ongoing
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
00
Publications
00
No. of Patents
Filed : 00
Grant : 00
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