Manipulating the Degrees of Freedom in Multifunctional Doped Semiconductor Nanocrystals
Implementing Organization
Indian Institute Of Technology Roorkee
Principal Investigator
Prof. Bharat Tandon
Indian Institute Of Technology Roorkee
bharat.tandon@cy.iitr.ac.in
Project Overview
The semiconductor industry is increasingly looking beyond traditional scaling methods, driven by demands for more efficient, powerful devices. This shift has sparked interest in multifunctional quantum materials, particularly those that leverage multiple degrees of freedom (charge, spin, orbital, lattice) to unlock novel properties. Plasmonic and magnetic dopants in semiconductor nanocrystals (NCs) hold immense potential for developing transformative applications in quantum photonics, spintronics, and optoelectronics. However, challenges remain in understanding and controlling the interactions between these dopants, which affect the material's optical and magnetic properties. This proposal aims to synthesize and systematically investigate heterostructures combining plasmonic and magnetic dopants in semiconductor NCs, with a focus on indium oxide doped with Sn⁴⁺ (plasmonic) and Mn²⁺ (magnetic) ions. By exploring how these dopants interact within core@shell architectures, the project seeks to uncover novel magneto-optic effects, enhance electromagnetic responses, and open pathways for multifunctional device applications. The research plan spans three years, encompassing the synthesis of doped NCs, optical and magnetic characterization, and advanced magneto-optic studies. The project is poised to significantly advance fundamental understanding and technological applications of doped semiconductor NCs, paving the way for innovations in next-generation sensors, data storage devices, and integrated photonic circuits.
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