Research Projects

2D semiconductors, such as tungsten disulfide and molybdenum disulfide (WS₂, MoS₂), have emerged as promising candidates for next-generation electronic devices due to their exceptional electronic properties, including atomic-level thinness, flexibility, bandgap tuning, and high carrier mobility. However, realizing the full potential for applications like transistors, these materials hinges on successfully integrating high-quality dielectric layers. Traditional dielectric materials, such as SiO₂ and HfO₂, are unsuitable for 2D semiconductors. These materials often suffer from interfacial traps, roughness, and leakage issues leading to performance degradation. To overcome these challenges, researchers have turned to seed with organic molecules, and surface treatment with ozone, plasma, or argon ion to grow ALD for high-quality dielectric layers on 2D materials. • One of the natural existing defects in 2D materials is sulfur vacancies (SVs) which can be optimized (more or less) by controlled annealing or argon ion treatment. SVs serve as nucleation sites for organic thiols doping sites to tune the electronic and optical properties. By carefully engineering the density of SVs, we can optimize the interfacial properties and enhance the overall device performance. • Here, in our proposal, we are introducing thiol-functionalized molecules to SVs to attach to the 2D material surface. Here the molecules with a hydroxy functional group can act as a seed layer to facilitate the growth of high-quality dielectric layers via ALD. • By carefully controlling the ALD process parameters, such as precursor pulse duration, purge time, and substrate temperature, researchers can achieve precise control over the thickness and quality of the dielectric layer. Here, we can use the ALD over 150 C to grow dielectrics with the molecular hydrophilic substrate. • The integration of high-quality dielectric layers on 2D materials leads us to high-performance transistors with enhanced gate control and reduced power consumption can be realized. • Beyond conventional electronics, 2D materials have the potential to revolutionize quantum computing. By fabricating quantum dots, researchers can explore single electron tunnelling in split-gate FETs. The integration of high-quality dielectrics is crucial for controlling the quantum states of these devices and enabling coherent quantum operations. In conclusion, the integration of high-quality dielectric layers on 2D materials is a critical step toward realizing the full potential of these materials in future electronic and quantum devices. By addressing the challenges associated with interfacial compatibility and defect formation, researchers are paving the way for a new era of device innovation. Continued research and development in this field are expected to lead to significant advancements in materials science, device engineering, and quantum technologies.