Development of THz modulator based on 2D transition metal chalcogenides
Implementing Organization
Indian Institute of Technology Delhi (IITD), Delhi
Principal Investigator
Dr Samaresh Das
Associate Professor,
Indian Institute of Technology Delhi (IITD), Delhi
CO-Principal Investigator
Dr Ankur Gupta
Associate Professor, Indian Institute of Technology Delhi (IITD), Delhi, Dr Pushpapraj Singh, Associate Professor,
Indian Institute of Technology Delhi (IITD), Delhi
Project Overview
In this project, an optically as well as electrically pumped, highly efficient THz modulator of modulation depth up to 80% will be developed. Also, the 2D TMDs are proposed to be synthesised using Chemical Vapor Deposition (CVD) and Molecular Beam Epitaxial (MBE) methods on the high-resistivity silicon substrate. The broadband THz modulation response is targeted in the spectrum of 0.1 to 1 THz. In order to improve the modulation depth, artificially structured nanomaterials called metamaterials will also be explored in this project.
Indian Institute of Technology Delhi (IITD), Delhi
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