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Physical modeling of Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) with field plate structure for High Power. High frequency and Highly Efficient Power Amplifiers

Implementing Organization

Maharaja Agrasen Institute of Technology (MAIT), New Delhi
Principal Investigator
Prof. R. S. Gupta
Professor
|
Maharaja Agrasen Institute of Technology (MAIT), New Delhi
Department of Electronics and Communication Engineering

Related Research

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Funding Organization
Funding Organization
Defence Research and Development Organization (DRDO), Govt. of India
Quick Information
Area of Research
Material Sciences
Focus Area
Gallium Nitride High Electron Mobility Transistor
Start Year
2017
End Year
2020
Sanction Amount
₹ 32.60 L
Status
Completed
Contact
rsgupta1943@gmail.co
m
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
00
No. of Patents
Filed : 00
Grant : 00
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