Research Projects

Magnetoelectric coupling phenomena were studied in multilayer thin films of a combination of various ferrites and ferroelectrics. The Fe3O? and BTO thin films especially in the form of heterostructure thin films are explored as single-layer, bilayer and trilayer films. In this proposal, we aim to prepare multilayers beyond four layers and carry out a systematic study of ME coupling with a number of layers that will generate new and interesting key data. As a result, the ME coefficient will increase in the current proposed multilayer heterostructure thin films. This will lead towards utilizing these systems for memory device applications.This research work aims to study the giant magnetoresistance and ME phenomena of ferroelectric or ferromagnetic thin films. The magnetoelectric phenomena will experiment with different metal and or or magnetic ferrite materials to improve the ME coefficient in the thin films, i.e. Ni, Cu, NiFe2O?, CoFe2O?, and CuFe2O?, etc. An associated objective is to achieve a high dielectric constant and low leakage current for the thin film deposit by the RF sputtering deposition method. The phase was confirmed by XRD patterns, Raman, TEM studies, and bandgap values studied using UV-Vis-NIR spectroscopy. Measure the magnetic, dielectric and electrical properties of these as-prepared samples and annealing films. magnetic domain features will be studied by magnetic force microscopy (MFM). The charge state and binding energy of the constituent elements will be explored using the XPs technique.