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Computational study of the role of elastic anisotropy surface stress and Compositional seggregation in Ge-Si coherent heteroepitaxial growth

Implementing Organization

Indian Institute of Technology (IIT), Kanpur
Principal Investigator
Dr. Madhav Ranganathan
Associate Professor
|
Uttar Pradesh, 208016
Department of Chemistry, Indian Instiute of Technology (IIT), Kanpur

Related Research

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Funding Organization
Funding Organization
Department of Science and Technology (DST)
Science and Engineering Research Board (SERB), New Delhi
Quick Information
Area of Research
Physical Sciences
Focus Area
Ge-Si Coherent heteroepitaxial growth
Start Year
2016
Sanction Amount
₹ 24.44 L
Status
Ongoing
Contact
madhavr@iitk.ac.in
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
00
No. of Patents
Filed : 00
Grant : 00
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