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Low- temperature epitaxial growth of high mobility ge1-xsnx channel material for pt/tin/high-k/GeOXNY/Ge1-XSnX/Ge/Si transistor to the integration of next generation CMOS and optoelectronics device on cost effective Si platform

Implementing Organization

Indian Institute of Technology (IIT), Mandi, Himachal Pradesh
Principal Investigator
Dr. Satinder Kumar Sharma
Associate Professor
|
Indian Institute of Technology (IIT) Mandi, Himachal Pradesh
School of Computing & Electrical Engineering

Abstract

NA

Patents

NA

Achievements

NA

Outcome / Output

NA

Publications

NA

Related Research

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Funding Organization
Funding Organization
Department of Science and Technology (DST)
Quick Information
Area of Research
Physical Sciences
Focus Area
Optoelectronics device
Start Year
2019
End Year
2021
Sanction Amount
₹ 6.58 L
Status
Completed
Contact
satinder@iitmandi.ac.in
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
NA
No. of Patents
Filed : 00
Grant : 00
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