Low- temperature epitaxial growth of high mobility ge1-xsnx channel material for pt/tin/high-k/GeOXNY/Ge1-XSnX/Ge/Si transistor to the integration of next generation CMOS and optoelectronics device on cost effective Si platform
Implementing Organization
Institute of Technology (IIT) Mandi, Himachal Pradesh
Principal Investigator
Dr. Satinder Kumar Sharma
Associate Professor
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Institute of Technology (IIT) Mandi, Himachal Pradesh