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Low- temperature epitaxial growth of high mobility ge1-xsnx channel material for pt/tin/high-k/GeOXNY/Ge1-XSnX/Ge/Si transistor to the integration of next generation CMOS and optoelectronics device on cost effective Si platform

Funding Organization
Funding Organization
Department of Science and Technology (DST)
Quick Information
Area of Research
Physical Sciences
Focus Area
Optoelectronics device
Start Year
2019
End Year
2021
Sanction Amount
₹ 6.58 L
Status
Completed
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
N/A
Startup (If Any)
00
No. of Patents
Filed :00
Grant :00
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