Development of THz modulator based on 2D transition metal chalcogenides
Implementing Organization
Indian Institute of Technology (IIT), New Delhi
Principal Investigator
Dr Samaresh Das
Associate Professor
|
Indian Institute of Technology Delhi (IITD), Delhi
CO-Principal Investigator
Dr Ankur Gupta
Associate Professor
|
Indian Institute of Technology Delhi (IITD), Delhi
CO-Principal Investigator
Dr Pushpapraj Singh
Associate Professor
|
Indian Institute of Technology Delhi (IITD), Delhi
About
In this project, an optically as well as electrically pumped, highly efficient THz modulator of modulation depth up to 80% will be developed. Also, the 2D TMDs are proposed to be synthesised using Chemical Vapor Deposition (CVD) and Molecular Beam Epitaxial (MBE) methods on the high-resistivity silicon substrate. The broadband THz modulation response is targeted in the spectrum of 0.1 to 1 THz. In order to improve the modulation depth, artificially structured nanomaterials called metamaterials will also be explored in this project.
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Indian Institute of Technology (IIT), New Delhi
Associate Professor
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