The aim and scope of the project are the following:
1. Optimization of deposition and assist ion parameters in the DIBS system while depositing Y2O3 spacer layer in between the substrate and the buffer layer. The impact of thickness, stoichiometric composition, and doping concentration of Y2O3 on the overall device performance will be studied.
2. For the MOSHFET structure, deposition of high-k dielectric materials such as Al2O3 and HfO2 will be attempted to study the impact on the leakage current reduction in the device.
3. Minimizing the off-state leakage currents in MOSHFETs is primordial to their implementation into systems with low-noise and low-power consumptions.
4. Device performance measurement in terms of input and output characteristics will be carried out.
Indian Institute of Technology (Indore)
Associate Professor
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