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Electrical and magnetic transport characterizations of M/CdIn2Se4/S sandwiched device (M: Pt, Au; S: Pyrographite, PbZr0.52Ti0.48O3, Ba0.4Sr0.6TiO3) for resistive memory switching applications

Implementing Organization

Natubhai V Patel College Of Pure and Applied Sciences, Gujarat
Principal Investigator
Dr. Dhananjay Dhruv
Natubhai V Patel College Of Pure and Applied Sciences, Gujarat
CO-Principal Investigator
Dr. Bharat R Kataria
Saurashtra University
Saurashtra University, Department of Nanoscience and Advanced Materials

About

The project aims to synthesize and characterize CdIn2Se4 powder, PbZr0.52Ti0.48O3, and Ba0.4Sr0.6TiO3, and deposition CdIn2Se4 films on quartz glass, sodium chloride, and copper grid substrates. The fabricated devices will be studied for resistive memory switching behavior, with a high ON to OFF ratio, ample retention time, and good endurance. Theoretical models such as Fowler-Nordheim tunnelling, Poole-Frenkel emission, Interface-limited Schottky emission, and space charge limited conduction will be discussed to understand the conduction mechanism's physical origin. The results will be implemented for prototype use in electronic industries and potentially executed at a large scale for the betterment of society.

Funding Organization
Funding Organization
Department of Science and Technology (DST)
Quick Information
Area of Research
Chemical Sciences
Focus Area
Magnetic Transport Characterization
Start Year
2023
End Year
2025
Sanction Amount
₹ 15.18 L
Status
Completed
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
N/A
Startup (If Any)
00
No. of Patents
Filed :00
Grant :00
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