The project aims to synthesize and characterize CdIn2Se4 powder, PbZr0.52Ti0.48O3, and Ba0.4Sr0.6TiO3, and deposition CdIn2Se4 films on quartz glass, sodium chloride, and copper grid substrates. The fabricated devices will be studied for resistive memory switching behavior, with a high ON to OFF ratio, ample retention time, and good endurance. Theoretical models such as Fowler-Nordheim tunnelling, Poole-Frenkel emission, Interface-limited Schottky emission, and space charge limited conduction will be discussed to understand the conduction mechanism's physical origin. The results will be implemented for prototype use in electronic industries and potentially executed at a large scale for the betterment of society.