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High output power emitters and sensitive detectors based on AlGaN nano-heterostructures for deep-ultraviolet radiation towards biological application

Implementing Organization

Principal Investigator
Dr. Govind Gupta
CSIR-National Physical Laboratory, Delhi
Principal Investigator
Dr. K.S. Krishnan
New Delhi, 110012
CO-Principal Investigator
Dr. Lalit Goswami
CSIR-National Physical Laboratory (CSIR-NPL), New Delhi
CO-Principal Investigator
Dr. Preetam Singh
CSIR-National Physical Laboratory (CSIR-NPL), New Delhi

About

The BRICS project, BIO-LIGHT, aims to develop high-output power emitters and sensitive detectors based on AlGaN nanoheterostructures for deep-ultraviolet DUV radiation for biological applications. The project, involving Russia, China, and India, will develop compact DUV light sources and photodetectors in a wavelength range of 230-280nm. The project aims to improve detection of DUV light sources for public health.

The study focuses on the development of high-performance photodetectors using group-III nitrides for solid-state lighting and high-power electronics. The key prerequisites for this include the crystalline quality of Al, Ga N heterostructures and their effective doping. The researchers will exploit the atomically thin binary GaN quantum wells QWs with potentially improved deep-UV light emission and extraction efficiencies to develop high-quality monolayer multilayer GaN/AlN nano-heterostructures on silicon/sapphire substrates. The study will use various techniques to investigate the physical phenomena of ultra-thin 2D-heterostructures and their growth mechanisms. The devices will be exposed to AlGaN-based high-performance DUV-LEDs and electron beam pumped UV emitters for 230-280 nm spectral range. The study aims to address the challenges related to controlled p-doping, co-doping, and polarization induced doping in AlN GaN.

Funding Organization
Funding Organization
Department of Science and Technology (DST)
Quick Information
Area of Research
Earth, Atmosphere & Environment Sciences
Focus Area
Device Fabrication and Integration
Start Year
2023
End Year
2026
Sanction Amount
₹ 1.01 Cr
Status
Ongoing
Contact
govindnpl@gmail.com,lalitggoswami@gmail.com,singhp@nplindia.org
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
00
No. of Patents
Filed : 00
Grant : 00
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