Development of Magnetic semiconductor for Next-Generation spintronics Devices based on Transition
Metal-Ion substituted Nickel Oxide
Implementing Organization
Indian Institute of Science
Principal Investigator
Mr. Pankaj Bhardwaj
Indian Institute of Science
About
semiconductor spintronics is gaining attention due to its integration of conventional semiconductors for processing and computing with magnets for data storage applications. Transition metal (TM) ions can create dilute magnetic semiconductors with high electronics and photonics properties, including magnetic functionality. Magnetic semiconductors generate strong spin-dependent coupling, resulting in high curie temperature (Tc). However, limited spin-polarized charge carriers hinder functionality at high temperatures. Nickel Oxide (NiO) is a prominent candidate that fulfills both magnetic semiconductors criteria and can become a next-generation spintronics device. NiO is an antiferromagnetic p-type transparent semiconducting oxide with a high Neel temperature of 523 K and a wide optical band gap. This research proposal proposes the substitution of various ions into NiO using co-precipitation and pulsed laser deposition to investigate its structural, optical, morphological, transport, and magnetic properties for device fabrication. The outcome will have significant implications for developing new spintronics devices, such as transparent ferromagnets, solar spin photodiodes, and spin power devices.
Source
Source
science and Engineering Research Board (sERB), DsT
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