Research Projects

spintronics has evolved from the development of magnetoresistive sensors to the conceptualization of non-volatile random access memory (RAM), such as Magnetoresistive RAM (MRAM) and spin-transfer torque RAM (sTT-RAM). These devices are magnetically ordered materials that process or store data using quantum mechanical properties of spin angular momentum of electrons. They can store data for longer periods and execute data reading and writing operations quickly with a small spin-current or magnetic field. However, sTT-RAM faces challenges due to the requirement of large current. A new effect, spin-orbit torque (sOT), is realized in the bilayer Ferromagnetic (FM) - Heavy metal (HM) heterostructure. This effect allows for the switching of magnetic moment of FM layers by a spin polarized current injected from the HM. Currently, FM alloy-Pt heterostructure is used for sOT-RAM, but a new class of materials called vdW materials, which have 2D layers of atoms and a weak Van der Waals bond, is being explored. The project aims to design vdW FM materials with PMA and Tc greater than 400 K in single crystalline form, characterizing them down to a few nm thickness limit.