Research Projects

Deep-UV photodetectors based on gallium oxide are not in commercial production due to sub-optimal performance. To move from dominant fields like silicon, siC, or GaN, zinc oxide-based optoelectronics must show unmatched performance. The proposed work aims to improve three key characteristics of gallium oxide-based UV photodetectors: Dark Current, Responsivity, and Response Time. The work proposes introducing schottky junctions using Ag or Au metals to minimize Dark Current and control the generation-recombination current. Responsivity depends on device architecture and photoconductive gain. The planar geometry MsM photodetector is gaining momentum among the scientific community. The incorporation of metal nanoparticles into Ga2O3 leads to alloying effect, improving Responsivity. The response time of the photodetector is influenced by the crystal quality of the film and diffusion of charge carriers across the junction.