First Principles Investigations of PtSe₂ Nanoribbons for Futuristics Nano-electronic Devices
Implementing Organization
Principal Investigator
Dr. kamal Kishor Jha
Indian Institute Of Information Technology, Vadodara, Gandhinagar, Gujarat
Project Overview
The major obstacle for graphene towards practical realization of organic electronic device is the intrinsic zero band gap making it semi-metallic in nature. All the electronic devices made out of it would definitely suffer high leakage current which is not desirable at all. On the other hand, Novel monolayers of PtSe₂ exhibit a finite band gap of 1.35-1.20 eV which could be the next alternative for beyond Si devices. Further, the asymmetric edge functionalization of these nanoribbons could lead to the generation of finite magnetic moments. The induced magnetism would be helpful for designing an entirely new class of electronic/spintronic devices.