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First Principles Investigations of PtSe₂ Nanoribbons for Futuristics Nano-electronic Devices

Implementing Organization

Principal Investigator
Dr. kamal Kishor Jha
Indian Institute Of Information Technology, Vadodara, Gandhinagar, Gujarat

Project Overview

The major obstacle for graphene towards practical realization of organic electronic device is the intrinsic zero band gap making it semi-metallic in nature. All the electronic devices made out of it would definitely suffer high leakage current which is not desirable at all. On the other hand, Novel monolayers of PtSe₂ exhibit a finite band gap of 1.35-1.20 eV which could be the next alternative for beyond Si devices. Further, the asymmetric edge functionalization of these nanoribbons could lead to the generation of finite magnetic moments. The induced magnetism would be helpful for designing an entirely new class of electronic/spintronic devices.
Funding Organization
Funding Organization
Science and Engineering Research Board (SERB), New Delhi
Anusandhan National Research Foundation (ANRF)
Quick Information
Area of Research
Physical Sciences
Focus Area
Condensed Matter Physics
Start Year
2024
End Year
2027
Sanction Amount
₹ 6.60 L
Status
Ongoing
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
N/A
Startup (If Any)
00
No. of Patents
Filed :00
Grant :00
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