First Principles Investigations of PtSe₂ Nanoribbons for Futuristics Nano-electronic Devices

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Implementing Organization

Principal Investigator

Dr. kamal Kishor Jha

Indian Institute Of Information Technology, Vadodara, Gandhinagar, Gujarat

About

The major obstacle for graphene towards practical realization of organic electronic device is the intrinsic zero band gap making it semi-metallic in nature. All the electronic devices made out of it would definitely suffer high leakage current which is not desirable at all. On the other hand, Novel monolayers of PtSe₂ exhibit a finite band gap of 1.35-1.20 eV which could be the next alternative for beyond Si devices. Further, the asymmetric edge functionalization of these nanoribbons could lead to the generation of finite magnetic moments. The induced magnetism would be helpful for designing an entirely new class of electronic/spintronic devices.

Source

Anusandhan National Research Foundation/Science and Engineering Research Board (SERB), DST 2023-24

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Funding Organization

Science and Engineering Research Board (SERB), New Delhi

Anusandhan National Research Foundation (ANRF)

Quick Information

Area of Research

Physical Sciences

Focus Area

Condensed Matter Physics

Start Year

2024

End Year

2027

Sanction Amount

₹ 6.60 L

Status

Ongoing

Contact

kamal@iiitvadodara.ac.in

Output

No. of Research Paper

Technologies (If Any)

No. of PhD Produced

No. of Patents

Filed : 00

Grant : 00

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