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Flexible Memristor-based Synapses: towards an adaptive, low-power Neuroprosthesis Device (FleMSyND)

Implementing Organization

C. V. Raman Global University (Raman Education Society), Odisha
Principal Investigator
Dr. Debashis Panda
C. V. Raman Global University, Bhubaneswar, Odisha
CO-Principal Investigator
Dr. Ayan RoyChaudhuri
Indian Institute of Technology (IIT)

About

The study aims to create artificial synapses using metal-insulator-metal (MIM) memristors on flexible substrates. These memristors adjust their electrical conductance based on the flow of electronic charge between neurons. The researchers will use advanced multi-electrode-arrays (MEAs) and electrophysiology equipment to record and stimulate neural activity. The goal is to create a neuro-electronic platform that allows the fabricated flexible memristive synapses to interact with neuronal hippocampal cell cultures, proving the viability of natural-electronic communication. This project marks the first step towards creating ultra-low-power implantable adaptable electronics that can directly interact with key brain functions in neurological disorders.

Source

Source
Anusandhan National Research Foundation/Science and Engineering Research Board (SERB), DST 2023-24
Funding Organization
Funding Organization
Anusandhan National Research Foundation (ANRF)
Quick Information
Area of Research
Engineering Sciences
Focus Area
Neuroprosthetic Devices
Start Year
2024
End Year
2027
Sanction Amount
₹ 46.40 L
Status
Ongoing
Contact
phy.dpanda@gmail.com
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
00
No. of Patents
Filed : 00
Grant : 00
Disclaimer: Information available on this portal is sourced from various organizations and is provided for informational purposes only. Users are advised to verify details from the respective official sources.
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