Flexible Memristor-based Synapses: towards an adaptive, low-power Neuroprosthesis Device (FleMSyND)
Implementing Organization
C. V. Raman Global University (Raman Education Society), Odisha
Principal Investigator
Dr. Debashis Panda
C. V. Raman Global University, Bhubaneswar, Odisha
CO-Principal Investigator
Dr. Ayan RoyChaudhuri
Indian Institute of Technology (IIT)
Project Overview
The study aims to create artificial synapses using metal-insulator-metal (MIM) memristors on flexible substrates. These memristors adjust their electrical conductance based on the flow of electronic charge between neurons. The researchers will use advanced multi-electrode-arrays (MEAs) and electrophysiology equipment to record and stimulate neural activity. The goal is to create a neuro-electronic platform that allows the fabricated flexible memristive synapses to interact with neuronal hippocampal cell cultures, proving the viability of natural-electronic communication. This project marks the first step towards creating ultra-low-power implantable adaptable electronics that can directly interact with key brain functions in neurological disorders.