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Flexible Memristor-based Synapses: towards an adaptive, low-power Neuroprosthesis Device (FleMSyND)

Implementing Organization

C. V. Raman Global University (Raman Education Society), Odisha
Principal Investigator
Dr. Debashis Panda
C. V. Raman Global University, Bhubaneswar, Odisha
CO-Principal Investigator
Dr. Ayan RoyChaudhuri
Indian Institute of Technology (IIT)

Project Overview

The study aims to create artificial synapses using metal-insulator-metal (MIM) memristors on flexible substrates. These memristors adjust their electrical conductance based on the flow of electronic charge between neurons. The researchers will use advanced multi-electrode-arrays (MEAs) and electrophysiology equipment to record and stimulate neural activity. The goal is to create a neuro-electronic platform that allows the fabricated flexible memristive synapses to interact with neuronal hippocampal cell cultures, proving the viability of natural-electronic communication. This project marks the first step towards creating ultra-low-power implantable adaptable electronics that can directly interact with key brain functions in neurological disorders.
Funding Organization
Funding Organization
Anusandhan National Research Foundation (ANRF)
Quick Information
Area of Research
Engineering Sciences
Focus Area
Neuroprosthetic Devices
Start Year
2024
End Year
2027
Sanction Amount
₹ 46.40 L
Status
Ongoing
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
N/A
Startup (If Any)
00
No. of Patents
Filed :00
Grant :00
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