Research Projects

The Von Neumann bottleneck which is the separation between memory and central processing unit (CPU) in traditional computers is facing challenges due to massive data processing [1]. These bottlenecks can be addressed by fabricating complementary two and three-terminal devices with built-in non-volatile memory such as memristors, floating gate memories etc. Here in this proposal, we propose to (a) synthesize large area Quantum Materials like MX2 (M: Mo, W and X: S, Se) using the CVD/ALD route (b) dry/wet transfer of monolayer / a few layers to fabricate heterostructures, (c) fabricate memristive devices in discrete and crossbar architecture (d) Perform room temperature electrical measurements to demonstrate memory application.