Ultra-low-energy area-efficient and fast spintronics based on synthetic antiferromagnets using electric-field-induced magnetoelectric switching in multiferroic nanostructures
Implementing Organization
Indian Institute of Science
Principal Investigator
Dr. Kuntal Roy
Indian Institute of Science
Project Overview
Antiferromagnets, which were once considered useless for electron spin-based electronics, have gained significant attention in recent years. PI has demonstrated that antiferromagnetically coupled synthetic nanomagnets can be highly stable at low dimensions, leading to ultra high-density non-volatile information storage and logic systems. Their work on energy-efficient electric-field induced magnetization switching in multiferroics has gained global attention. The use of antiferromagnetically coupled nanomagnets in multiferroics can revolutionize the development of ultra-low-energy area-efficient and ultrafast spintronics. Spintronics has the potential to replace current transistor-based technology in future energy-efficient information processing systems. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grunberg for their discovery of Giant Magneto-Resistance (GMR). The industry is also developing spintronic devices for various applications, such as instant turn-on computers, highly-dense memories, and the replacement of all types of memories in the memory hierarchy in a single chip. PI has been a proponent of energy-efficient nanoelectronics, showing that electric field-induced magnetization switching in strain-mediated piezoelectric-magnetostrictive multiferroic composites can be very energy-efficient. The proposed synthetic antiferromagnet-based multiferroic devices will be experimentally demonstrated with theory, simulations, and analysis of magnetization dynamics using the stochastic Landau-Lifshitz-Gilbert equation, ensuring successful magnetization switching probability close to 100% for technological applications.