Research Projects

This project proposal aims to utilize the optical properties of GaAs quantum dots (QDs) grown on GaAs substrate using molecular beam epitaxy (MBE). These dots, created by local droplet-etched nanoholes in the AlGaAs barrier, offer controlled dot size and emission energy, making them a suitable source for quantum photonics. They outperform InAs QDs due to their higher oscillator strengths and smaller nuclear spin of Ga-isotopes. The popularity of GaAs dot is due to its on-demand supply of single photons, which is essential for quantum communication and computation schemes. The proposal proposes using electrically pumping a single QD instead of optical one, using a p-i-n diode containing GaAs QDs. GaAs dots are typically 6-7 nm tall and emit at approximately 780 nm, crucial for quantum memory applications. The project aims to establish electrically pumped GaAs QD-based single dot spectroscopy and single photon characterization technique in IIT Delhi for the first time in India.