Research Projects

In recent years, the need for high-power and high-frequency semiconductor devices has led to the development of Gallium Nitride (GaN)-based semiconductor devices. These devices offer higher current densities, saturation velocity, breakdown voltage, wide band-gap, and high thermal conductivity, making them suitable for wireless communication applications like 5G and IoT. The GaN semiconductor devices market is expected to grow at a CAGR of 5.8% and reach USD 29.6 billion by 2030. Si-based laterally diffused MOSFETs (LDMOS) have been the leading choice for base station applications due to their low price. However, the demand for smaller, smaller power amplifiers (PAs) is increasing, which could be fulfilled by GaN high electron mobility transistors (HEMTs) technology. GaN-based devices will be predominantly used in the RF domain, particularly for wireless communication, due to their inherent properties. This project aims to develop a compact model for GaN HEMT technology, which can be used to develop PAs, LNAs, and RF switches. Model validation will be conducted on dedicated circuit blocks, and the final PDK implementation will be implemented in ADS for circuit simulation. The model will also be used to develop next-generation MMIC power amplifiers (PA), Low-Noise-Amplifiers (LNAs), and RF switches, facilitating advancements in wireless communication systems at various stages of transmission and reception.