Characterization and performance optimization of transition metal dichalcogenides for advanced nanoelectronics and photonic applications
Implementing Organization
Indian Institute of Technology (IIT)
Principal Investigator
Dr. Mehak Mahajan
Indian Institute of Technology (IIT)
About
The development of two-dimensional (2D) materials, particularly layered transition metal dichalcogenides (TMDs), has led to significant advancements in condensed matter physics, material sciences, photonics, and nanotechnology. These materials have unique electronic band structures, anisotropic properties, giant dielectric constants, and non-linear behavior, making them promising for implementing devices with enhanced functionalities. The research focuses on investigating the electronic band structures and optical properties of layered TMDs to understand electron transport within the material and the corresponding light-matter interactions. One of the prominent features of layered TMDs is the indirect to direct band gap transition by reducing the thickness to monolayers, making them highly promising for optoelectronic devices. The research focuses on tuning their band gaps through heterojunction formation for tailored electronic and optoelectronic applications, including high-performance transistors, ultra-broadband photodetectors, sensors, and light-emitting diodes. Additionally, the research aims to fabricate quantum devices based on TMDs that generate single photons, which is helpful for quantum optics and quantum communication systems. The concept of charge density waves (CDW) is also explored, which results from the variation in the conduction electron density associated with atomic displacements. By controlling CDW phase transitions through external parameters in van der Waals heterojunctions, the researchers aim to unlock unprecedented applications for electronics, optoelectronics, and quantum technologies.
Source
Source
Anusandhan National Research Foundation/Science and Engineering Research Board (SERB), DST 2023-24
Science and Engineering Research Board (SERB), New Delhi
Anusandhan National Research Foundation (ANRF)
Quick Information
Area of Research
Material Sciences
Start Year
2024
End Year
2026
Status
Ongoing
Contact
mehak@iisc.ac.in
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
00
No. of Patents
Filed :00
Grant :00
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