GaN-Based Transistors with unity power gain frequency beyond 100 GHz
Implementing Organization
Indian Institute of Technology (IIT)
Principal Investigator
Dr. Dipankar Saha
Indian Institute of Technology (IIT)
About
GaN-based high electron mobility transistors have been proven to be the technology for all RF high power applications. It has already marked its presence up to Ka-band applications. Aggressive efforts are now directed towards the realization of W band applications, which require transistors beyond 100 GHz unit operating frequency. This frequency domain is now ruled mostly by InP devices, which suffer many problems, including low output power. This proposal proposes to bridge this profound gap and bring out a solution through the engineering of the heterostructure, device fabrication, and processing technologies.
Source
Source
Anusandhan National Research Foundation/Science and Engineering Research Board (SERB), DST 2023-24
Science and Engineering Research Board (SERB), New Delhi
Anusandhan National Research Foundation (ANRF)
Quick Information
Area of Research
Physical Sciences
Start Year
2023
End Year
2026
Sanction Amount
₹ 78.32 L
Status
Ongoing
Contact
dipankarsaha@iitb.ac.in
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
00
No. of Patents
Filed :00
Grant :00
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