Wireless communication industries are rapidly expanding, with the 5G cellular system being a key IoE enabler. 6G networks will serve future services such as human-human and human-machine interaction, AI and 3D networking, quantum communications, and intelligent reflecting surface (IRs). B5G and 6G communication must support many wireless standards operating up to 3 THz frequency. Passive devices, such as switches, are essential components in wireless transceivers and consume a significant power budget. RF-MEMs switches provide excellent RF performance even at higher operating frequencies compared to solid-state technology-based switches. However, the capacitance ratio of these devices degrades in the actuated state, and various approaches have been proposed to address this issue. The proposed solution requires fewer process steps and lithography, takes total capacitance during the actuated state, and can easily change to various frequencies without affecting device response across different domains. The proposed device uses a non-uniform cantilever with two flexures attached to a broader beam. To save the size and cost of RF systems, a true cost-effective frequency reconfigurable switching device will be developed for B5G and 6G applications. The devices will be fabricated at CsIR-CsIO, Chandigarh using the surface micromachining process. The developed technology will be transferred to Indian industries to promote the make-in-India mission for in-house fabrication of cost-effective switching devices for B5G and 6G applications.
Source
Source
Anusandhan National Research Foundation/science and Engineering Research Board (sERB), DsT 2023-24
Science and Engineering Research Board (SERB), New Delhi
Anusandhan National Research Foundation (ANRF)
Quick Information
Area of Research
Engineering Sciences
Start Year
2024
End Year
2027
Sanction Amount
₹ 43.18 L
Status
Ongoing
Contact
mahesh_angira@nith.ac.in
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
00
No. of Patents
Filed :00
Grant :00
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