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Growth mechanism and interface engineering of 2D-transition metal dichalcogenides (Mos₂) and cupric oxide (CuO) heterostructure for photovoltaic applications

Implementing Organization

Ramsaday College, West Bengal
Principal Investigator
Dr. sukdev Dolai
Ramsaday College, West Bengal

Project Overview

The majority of energy sources worldwide are non-renewable, including earth minerals, fossil fuels, and nuclear fuels. However, these sources pose numerous challenges, including the generation of harmful greenhouse gas emissions and increasing energy demand due to population growth. To address these issues, the international community has focused on renewable energy sources, such as compressed natural gas, biomass, geothermal power, radiant energy, hydroelectricity, wind power, solar power, wave power, and tidal power. sunlight is an unlimited source of renewable energy, providing light and heat for the environment and its inhabitants. Photovoltaic cells and optoelectronic devices convert solar energy into electrical energy through photocurrent generation. Two-dimensional (2D) layered materials, such as transition metal dichalcogenide (TMD) semiconductors, have gained attention due to their excellent optical, electrical, chemical, and mechanical properties. These materials are effective beyond graphene and are used in various optoelectronic applications due to their transformation from the indirect band of bulks to the direct band of mono/few-layer TMDs. CuO, a promising p-type oxide semiconductor with an electronic band gap range of 1.3 to 1.7 eV and an absorbance coefficient in the solar spectrum, is a promising choice for developing heterojunctions with other n-type semiconductors like ZnO. This study aims to investigate the growth mechanism of individual materials and study the interface engineering of TMDs (Mos₂) and CuO-based heterojunction, focusing on interface effects on structural, electrical, optical, and different optoelectronic properties.
Funding Organization
Funding Organization
Science and Engineering Research Board (SERB), New Delhi
Anusandhan National Research Foundation (ANRF)
Quick Information
Area of Research
Physical Sciences
Start Year
2023
End Year
2026
Sanction Amount
₹ 26.53 L
Status
Ongoing
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
N/A
Startup (If Any)
00
No. of Patents
Filed :00
Grant :00
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