2D Spintronic-based Logic-in-Memory Devices for beyond Von-Neuman Architecture
Implementing Organization
Foundation for Innovation and Technology Transfer
Principal Investigator
Dr. Muzafar Gani
Foundation for Innovation and Technology Transfer
About
The electronic industry has made significant progress in reducing the cost, size, and power requirements of chips through scaling as per Moore's Law. From 1956 floating-point operations to the 2016 supercomputer (RIKEN), the power cost of floating-point operations has been reduced by almost 400 billion. This has allowed the traditional Von-Neumann computing paradigm to survive, but it has led to increased energy consumption and wasted time. Several approaches have been proposed for beyond Von-Neumann architecture, such as neuromorphic computing or spintronic device-based processors. Spintronic devices, such as Magnetic Tunnel Junction (MTJ) devices, can work as both a logic and memory cell, offering integrated memory architecture beyond the Von-Neumann bottleneck. These devices are commonly used in MRAM, HDD read heads, and logic applications. The spin-based computing system offers features such as non-volatility, high speed operation, zero static power, good scalability, high density, and lesser device count per logic gate. The challenge for beyond Von-Neumann architecture lies in developing materials and devices that can permit this paradigm. Two-dimensional (2D) materials have been found to efficiently manipulate, transport, and generate spin signals, making them a promising platform for building spintronic devices beyond the CMOS/Von-Neumann architecture.