Research Projects

Project major focus will be designing a highly stable FinFET with improved drain current characteristics that can be used for analog IC with high noise immunity, high value transconductance better switching characteristics. Technology driven computer added design (TCAD) is a mean to evaluate the proposed transistor architecture for different applications. Firstly, a new design of FinFET will be explored by evaluating electrical parameters like surface potential, electric field and drain current, transconductance, switching capacitance, noise margin, cutoff frequency, gain bandwidth product and stability factor etc. Also, the analog performance parameters will be evaluated at harsh environmental conditions like extreme temperature and pressure. Fabrications related defects is another challenge that will be analysed with the use of process fabrication module of TCAD. The proposed FinFET will be explored for radiations effects using CRad tool of Visual TCAD device simulator. Also, a similar FinFET architecture will be explored for biosensing properties by adding nanogap cavity region. By changing the dielectric constant or charge particles in cavity region is used to evaluate the drain current characteristics of proposed FinFET biosensor.