Research Projects

The study aims to demonstrate the use of Junction-less Double-Gate MOSFETs in deep space applications due to their resistance to short-channel effects and device temperature variations. Preliminary results show these MOSFETs can show good electrostatics under various process conditions. The study also aims to show their application in PMOS and NMOS applications, considering physical effects like Quantum Confinement and BTBT effects in thin channels. The researchers plan to investigate the impact of gamma radiation and single event effects on the modified MOSFET, designing it to ensure radiation-hardened behavior over various device temperatures. A compact model for the proposed transistor will be developed to ensure its applicability to CMOS applications at cryogenic temperatures.