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Design, Fabrication and Characterization of Ultrafast Mixed-mode Optical-Electrical Switches based on Chalcogenide Phase Change Materials for Optoelectronic and Photonic Applications

Implementing Organization

Indian Institute of Technology (Madras)
Principal Investigator
Dr. Anbarasu Manivannan
Indian Institute of Technology (Madras)

About

Resistive-switching of phase-change cells in Fabry-Perot resonator structures has led to the development of high-resolution, fast, and non-volatile optoelectronic color displays and holograms. Phase-change meta-devices, a form of switchable dielectric, can provide novel functionalities such as beam steering, perfect infrared absorbers and modulators, and planar and re-configurable thin-film lenses. The proposed work of optically or electrically induced structural changes in the electrical or optical properties of phase-change devices is appealing in several respects. Conventional phase-change devices, such as memories, are typically two-terminal devices. However, the introduction of a third terminal (or gate) could provide new possibilities, such as ultra-fast optically-triggered phase-change switches, 3-terminal phase-change logic, and even a form of chalcogenide-based field-effect transistor. 3-terminal phase-change devices have already been explored in the area of RF-switching, where the 3rd terminal is used as an electrical heater to thermally switch a phase-change cell between high and low resistance states. This proposed project aims to develop optically triggered switches that could potentially deliver much faster switching times, as ultra-fast laser pulses can bring the switching time for phase-change materials down to the picosecond regime. The ability to access both excitation and detection modes simultaneously should help clarify unresolved aspects of the switching process in phase-change devices, such as the role of heat and the electric field on the threshold-switching mechanism.
Funding Organization
Funding Organization
Science and Engineering Research Board (SERB), New Delhi
Anusandhan National Research Foundation (ANRF)
Quick Information
Area of Research
Engineering Sciences
Start Year
2022
End Year
2024
Sanction Amount
₹ 40.95 L
Status
Completed
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
N/A
Startup (If Any)
00
No. of Patents
Filed :00
Grant :00
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