Research Projects

In recent years, infrared detectors have drawn enormous kind attention in the field of consumer electronics, artificial intelligence, defence, space, industrial automation and medical diagnosis. Hence, tremendous efforts have been given for the development of high-performance IR detectors. The extent of absorption of IR light as well as the generation photo-electrons are the key factors to decide the performance of IR detectors. In this regard, the incorporation of advanced material along with novel device structure is equally importance for the improved performance. A preliminary attempt has been proposed to grow the reduced graphene oxide-metal dichalcogenides based composite layer on silicon nanostructures, fabricated inside the patterned microcavity, for the enhancement of the performance of infrared detector. Initially, silicon microcavity will be fabricated by anisotropic wet chemical etching of silicon. Afterwards, silicon nanostructures will be fabricated on the patterned microcavity. Thereafter, the reduced graphene oxide-metal dichalcogenide composite layer will be coated on the Si nanostructures. The morphological, structural and electrical properties of the composite layer will be investigated to optimize the process condition. The surface potential, nature of band alignment, modulation of surface electronic properties during IR exposure will be studied by Kelvin Probe Force Microscopy (KPFM). It is expected that the micropatterning of Si wafer will enhance the absorption of IR light, whereas low dimensional composite structure will increase the photogenerated carriers. After the metallization, the IR response will be studied by performing current-time measurements with various wavelengths. A mathematical model will be established to understand working mechanism of the proposed composite hybrid detector after fitting the experimental data. The above proposed Complementary Metal Oxide Semiconductor (CMOS) compatible process is a nontoxic, low cost technique to produce high performance IR detectors and this investigation will provide a suitable platform for the development of next-generation IR detectors.