Research Projects

The main aim of this project is to develop a cost-effective mass production of high quality epitaxial Ge1-xSnx alloys by sputtering epitaxy and fabricate p-i-n and metal-semiconductor-metal (MSM) infrared high-speed photodetectors, based on them. By addressing the challenges on the high lattice mismatched for Ge1-xSnx on Si (4.2 – 19%) and low solid solubility of Sn in Ge matrix (less than 1%), fabrication of high quality Ge1-xSnx epilayers by magnetron sputtering will be investigated. This will be followed by optimization of crystal quality and thermal stability of the Ge1-xSnx epilayers with special attention to high Sn content alloys of different nanostructures. After successful development of high-quality Ge1-xSnx epilayers, p-i-n and MSM photodetectors will be fabricated and this will be followed by photocurrent measurement of the devices.