Research Projects

Molybdenum disulfide (MoS2) is an attractive candidate due to its high mechanical flexibility, tunable bandgap, quantum confinement effect, and optical sensitivity. It has been extensively researched for its potential applications in electronic devices such as energy storage devices, thin film transistors, and chemical sensors. MoS2 thin films exhibit high flexibility, surface to volume ratio, multiple active edge sites, high transparency, and chemical stability, making them a significant alternative for sensing applications. MoS2 can transform from an indirect bandgap of 1.2 eV to a direct bandgap of 1.9 eV as it changes from bulk to nanoscale. Its extensive electrical properties make it suitable for thin film transistor (TFT)-based switching device applications. The growth of MoS2 thin films is primarily done through exfoliation and chemical methods. This project focuses on growing 2D MoS2 thin films on different substrates using CVD and sputtering techniques to fabricate heterostructure-based TFT and gas sensing devices. Sputtering is considered a facile, efficient, and eco-friendly synthesis technique for large-scale deposition of contamination-free, consistent thin films at an industrial scale. Ion beam induced bandgap engineering has opened up new applications in photonics, nanoelectronics, and sensing. However, controlling defects in 2D TMDs and correlated defects with device efficacy is a significant challenge. MoS2-based devices and sensors have been used in high radiation environments, and understanding their tolerance under high radiation exposure is crucial.