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Synthesis of layered transition metal oxides for optoelectronic applications

Implementing Organization

Indian Institute of Technology Bombay
Principal Investigator
Dr. Tanushree Holme Choudhury
Indian Institute of Technology Bombay
CO-Principal Investigator
Dr. Revathy Padmanabhan
Indian Institute of Technology (IIT)

About

Layered transition metal chalcogenides (TMDs) are promising 2D semiconductors with exotic properties and interesting applications. However, they suffer from degradation in ambient conditions due to exposure to air and moisture. This proposal aims to explore alternate air-stable layered semiconductor-layered transition metal oxides, like WO₃ and MoO₃, which combine the benefits of layered chalcogenides with the chemical and thermal stability of oxides. The synthesis of layered transition metal oxides, like WO₃ and MoO₃, will be explored to understand their properties. Wafer-scale single-crystal transition metal sulfide films will be oxidized to obtain layered oxides and oxy-sulfides. Large-area films will be synthesized using liquid and solid precursors, and direct synthesis on different substrates will be used to determine the impact of the substrate on the crystallinity, phase, and microstructure of these films. A system equipped to handle oxidizing and reducing atmospheres will be constructed, with automatic recipe control and safety interlocks for controlled growth. Thermodynamic calculations will be used to predict the synthesis window and stability of these materials systems. The structural, optical, and electrical properties of these layered materials will be determined and used to correlate with optoelectronic device performance.
Funding Organization
Funding Organization
Science and Engineering Research Board (SERB), New Delhi
Anusandhan National Research Foundation (ANRF)
Quick Information
Area of Research
Physical Sciences
Start Year
2022
End Year
2025
Sanction Amount
₹ 54.71 L
Status
Completed
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
N/A
Startup (If Any)
00
No. of Patents
Filed :01
Grant :00
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