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2D Spintronic-based Logic-in-Memory Devices for beyond Von-Neuman Architecture

Implementing Organization

Principal Investigator
Dr. Muzafar Gani
Foundation For Innovation And Technology Transfer (Fitt) - IIT Delhi

Project Overview

The electronic industry has made significant progress in reducing the cost, size, and power requirements of chips through scaling as per Moore's Law. From 1956 floating-point operations to the 2016 supercomputer (RIKEN), the power cost of floating-point operations has been reduced by almost 400 billion. This has allowed the traditional Von-Neumann computing paradigm to survive, but it has led to increased energy consumption and wasted time. Several approaches have been proposed for beyond Von-Neumann architecture, such as neuromorphic computing or spintronic device-based processors. Spintronic devices, such as Magnetic Tunnel Junction (MTJ) devices, can work as both a logic and memory cell, offering integrated memory architecture beyond the Von-Neumann bottleneck. These devices are commonly used in MRAM, HDD read heads, and logic applications. The spin-based computing system offers features such as non-volatility, high speed operation, zero static power, good scalability, high density, and lesser device count per logic gate. The challenge for beyond Von-Neumann architecture lies in developing materials and devices that can permit this paradigm. Two-dimensional (2D) materials have been found to efficiently manipulate, transport, and generate spin signals, making them a promising platform for building spintronic devices beyond the CMOS/Von-Neumann architecture.

Source

Source
Science and Engineering Research Board (SERB), DST 2022-23
Funding Organization
Quick Information
Area of Research
Engineering Sciences
Focus Area
Neuromorphic computing, In-memory processing, Computational architecture
Start Date
2023
End Date
2025
Status
Completed
Contact
muzafarshpn@gmail.com
Output
No. of Research Paper
00
Technologies (If Any)
00
No. of PhD Produced
00
Publications
00
No. of Patents
Filed : 00
Grant : 00
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