Research Projects

The control of charge using solid-state transistors has become a significant aspect of modern electronic devices, with the proliferation of state-of-the-art devices resulting from the scaling of transistors in silicon-CMOS technology. Spintronics, which leverages the spin degree of freedom of electrons, has enabled applications such as sensors, nano-oscillators, non-volatile magnetoresistive (M)-RAMs, and neuromorphic computing. Magnetic tunnel junctions (MTJs) have become the focal point of various applications due to their CMOS integrability and non-volatility. However, the full potential of MTJs is still shrouded by their moderate tunnel magnetoresistance (TMR) and sizable STT switching bias. This proposal aims to integrate NEGF+DFT-based quantum transport with magnetization dynamics to reach the right material choices and device designs for high-performance functional heterostructure-based MTJs. The project will design heterostructure-based MTJs with semiconductor or stoichiometric substituted oxide quantum wells for their design and dephasing robustness attributed to Poisson charging feedback. The project will result in the development of a comprehensive computational platform for various functional spintronics devices, along with technologically relevant heterostructure-based MTJ designs. India's belated entry into the trillion-dollar semiconductor industry could be offset by the development of energy-efficient MTJ designs for non-volatile memory, offering immense potential for substantial advancements in beyond Moore's era.