The use of wide-bandgap semiconductors would vastly enhance the efficiency of power electronics – a critical national need from both the energy security and climate change perspectives. Here we propose to design and assemble power electronic interf
Section: Engineering Sciences (Research Project)
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Design &
Design & Development of Ultra-Wideband Multi-Octave Gallium Nitride Monolithic Microwave Integrated Circuit (MMIC) based Power Amplifier
Research Project › Engineering Sciences
RF Characterization
RF Characterization and Compact Modeling of Wide Band-Gap Gallium Nitride (GaN) Devices for the Next Generation Wireless Communication
Research Project › Engineering Sciences
Improving performance
Improving performance of power electronic circuits using GaN-HEMT devices
Research Project › Engineering Sciences
C-band Gallium
C-band Gallium Nitride (GaN)-based RF transistor on SiC
Research Project › Engineering Sciences
Universal Power
Universal Power Electronic Building Block (U-PEBB)-Assisted V2X-System with Enhanced Efficiency and Power Density
Research Project › Engineering Sciences