Research Projects

The project aims to design and fabricate an optically readable resistive memory/switching device for high-speed computation and memory applications. The resistive memory device is a promising building block for next-generation digital memory and computing systems. The proposed process steps for surface engineering and hybridization of silicon will result in minimal-change CMOS processes. The device will show an electric hysteresis curve and an optical extinction ratio for efficient detection of the resistive state. The Sihybrid/SiO2/AuAg structure forms a junction that works only under forward bias, providing a low leakage current. The self-rectification nature of the layers helps lower intra-layer sneak current. Subwavelength optical confinement in the device allows for the detection and utilization of resistive changes across the layers. The hybridization of silicon with compatible materials may add an extra degree of freedom to control electronic/optical changes during set-reset cycles. A ring resonator structure will be introduced to improve optical readout of the resistive memory. Electrical and optical characteristics will be studied and analyzed. Manpower training and skill development will be provided to UG, PG, and PhD students, as well as external students, staff, and faculty members through joint workshops in Integrated Photonics and Optical Communication.